高精度LDO
 
  微功耗电压检测芯片
 
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  肖特基二极管
 
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Voltage Detector
精工的高精度电压检测芯片是基于CMOS工艺技术。检测精度在 ±1.0% 到 ±2.0%,检测电压在芯片内部已固化,应用方便;输出类型有 Nch open-drain 和 CMOS (push pull) 两种。
Model No. Chinese
Data
Sheet
Features Detection Voltage Accuracy Operating Voltage Current Consumption Output Form Package
S-1000 
New
350 nA
Ultra-low current consumption
1.5 to 4.6 V ±1% 0.95 to 5.5 V 350 nA (Vdd=1.5V) Nch opendrain CMOS SC-82AB
SOT-23-5
SNT-4A
S-808xxC  Super-Small 0.8 to 6.0 V ±2% 0.65 to 5.0 V
(Det, 1.4V or less)
0.95 to 10 V
(Det. 1.5V or more)
0.8 µA (Vdd=3.5V) Nch opendrain CMOS SNT-4A
SC-82AB
SOT-23-5
SOT-89-3
TO-92
S-801 With Delay Circuit 2.2 to 6.0 V ±2% 0.95 to 10 V 1.3 µA (Vdd=3.5V) Nch opendrain CMOS SOT-23-5
SNT-4A
S-809xxC  With Delay Circuit 1.3 to 6.0 V ±2% 0.7 to 10 V 1.1 µA (Vin=3.5V) Nch opendrain CMOS SNT-4A
SC-82AB
SOT-23-5

 
 
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